Diodes Introduces High Performance MOSFETs in Ultra Small Packages

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Diodes has introduced a line of high performance MOSFETs in the ultra-small DFN1006-3 package. The package occupies only 0.6 square millimeters of PCB area, saving more than half of the board space compared to similar SOT723 package devices, with a junction-to-ambient thermal resistance (ROJA) of 256oC/W and a power consumption of 1.3W under continuous conditions. The power consumption of similar products is doubled.

As a result, the MOSFET 's lower operating temperature and space savings, plus a 0.4mm off-board height, make it ideal for ultra-thin portable consumer electronics, including tablets and smartphones. Diodes is the first to offer N-channel and P-channel devices rated at 20V, 30V and 60V. These devices can be used for a variety of highly reliable load switching, signal switching and boost conversion (boost) Conversion) application.

For example, the DMN2300UFB4 N-Channel MOSFET with a nominal voltage of 20V has an on-resistance of only 150mΩ, which is more than half the cost of competing solutions, helping to significantly reduce conduction losses and power dissipation. The P-channel, 20V DMN2300UFB4 offers similar leading performance. Both MOSFETs have a high ESD rating of 2kV and 3kV, respectively.

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