Because the Internet of Things has significantly increased the number of endpoints that capture a certain amount of data (about 2 billion devices shipped in 2017, a 54% increase from 2015), it requires a large amount of memory to process and store data. To this end, a large server fleet is being built that will consume a lot of power. Power conversion will generate heat and there will be losses. This heating is so large that cooling costs are one of the major costs of running a server fleet. This has led PSU manufacturers to continually seek to build more energy efficient PSUs. In addition, in order to reduce cooling costs with better energy efficiency, it is necessary to reduce the size of the PSU so that more servers can be installed in the same space.
There are many ways to transfer this data, but the next generation of wireless interconnect 5G is deployed in 2019. Once 5G technology is fully utilized, it will be able to deliver 10 times faster than current 4G LTE networks. This increase in speed requires higher power, which will increase the number of power MOSFETs in each 5G radio by a factor of about five.
To this end, ON Semiconductor offers a high-performance discrete solution to successfully achieve the energy efficiency goals of the cloud power market. Compared to the previous generation of superjunction devices, the new energy-efficient discrete 650 V SuperFET III MOSFET family enables cloud power supplies to achieve this higher energy efficiency. SuperFET III technology is available in three different versions: Easy Drive, Fast Recovery (FRFET) and Fast (FAST). Applications and topologies will determine which version should be used for optimal energy efficiency.
For the secondary side, ON Semiconductor offers a full line of medium and low voltage MOSFETs that have been optimized for cloud power supplies. T6 technology offers the industry's lowest RDSon for 30V, 40V and 60V. The new T8 technology provides the same ultra-low RDSon as the T6 for 25V, 40V, 60V and 80V, while further improving the switching parameters. For 80 V, 100 V and 120 V, PTNG technology provides excellent RDSon and body diode performance. As manufacturers challenged higher energy efficiency and ruggedness, they developed devices like ON Semiconductor's 650 and 1200 V silicon carbide (SiC) diodes for power factor correction (PFC).
With the dramatic increase in cloud-based IoT, it is important that the cloud is powered by the most energy efficient power supplies. ON Semiconductor is doing its best to provide leading-edge MOSFETs from 25V to 650V and to develop next-generation semiconductor SiC.
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