Cypress Announces Asynchronous SRAM

Board Crystal 3.2*2.5mm 3225 24M (24.000MHZ) 12PF 10PPM 20PPM 30PPM

L0504-Murata muRata common mode inductor 90Ω 150mA

Cypress Semiconductor, the market leader in static random access memory ( SRAM ), has announced that its 16Mb fast asynchronous SRAM with error correction code ( ECC ) has begun to be sampled. The on-chip ECC feature allows the new SRAM to have the highest level of data reliability without the need for additional error correction chips, simplifying design and saving board space. The device ensures data security in applications such as industrial, military, communications, data processing, medical, consumer electronics and automotive.

Soft errors caused by background radiation can damage stored content and lose important data. The hardware ECC module in Cypress's new asynchronous SRAM performs all error correction actions online without user intervention, resulting in the industry's best soft error (SER) performance. The 16Mb fast asynchronous SRAM has an access time of 10-ns and is compatible with current asynchronous SRAM pins, allowing customers to increase system reliability without having to change the board design.

Cypress also introduced a new fast asynchronous SRAM with PowerSnoozeTM that combines the fast asynchronous SRAM's 10-ns access time with ultra-low standby power comparable to the MoBL family. PowerSnooze is an additional deep sleep power-saving mode with typical deep sleep currents as low as 12 uA for 16Mb SRAM. The 16Mb Fast SRAM with PowerSnooze capability also provides on-chip ECC functionality.

"The Cypress is the world's undisputed leader in asynchronous SRAM with more than 30 years of development experience and the industry's broadest product line. We have ECC capabilities," said Sunil Thamaran, senior director of Cypress's asynchronous SRAM business unit. The new 16Mb asynchronous SRAM is a reliable single-chip memory solution for high-speed and low-power applications. Our SCC variants with ECC capabilities will also be added."

Cypress's 16Mb asynchronous SRAMs feature industry-standard x8, x16 and x32 configurations. The device is available in a variety of operating voltages (1.8V, 3V and 5V) and operates over the -40°C to +85°C (industrial grade) and -40°C to +125°C (automotive grade).

Availability

Samples of the new 16Mb Fast SRAM and 16Mb Fast SRAM with PowerSnooze are currently in volume and are expected to be in volume production in July 2014. These devices are packaged in RoHS-compliant 48-pin TSOP I, 48-ball VFBGA, 119-ball BGA and 54-pin TSOP II.