Renesas Electronics Announces Low On-Resistance Power MOSFET

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Renesas Electronics Corporation (TSE:6723), a leading global semiconductor and solutions provider, today announced three new low on-resistance MOSFET products, including ORing FETs for power supplies in network servers and storage systems. μPA2766T1A.

Renesas Electronics Low On-Resistance Power MOSFET μPA2766T1A

The new product's 30V voltage on-resistance is 0.72m? (typ), which is 50% lower than previous Renesas Electronics products, reaching the lowest level in the industry. In addition, the high efficiency of the product and the small surface package (8-pin HVSON) enable high current control in a smaller package size, resulting in lower power consumption and a smaller power supply for relatively large server storage systems. Turn.

For mission critical systems, a common function is to provide redundant power output, ie, by an ORing FET with multiple power supplies that maintain high reliability to the server's storage system. These ORing FETs are connected to the power output line of each power supply unit. They remain on during normal operation. However, if one of the power supplies fails, the corresponding device's ORing FET will switch to the off state to ensure that it is isolated from the other power supplies and that the failed power supply does not interrupt the system.

The power output line is capable of handling powerful currents from tens to hundreds of amps during normal operation. The ORing FET must have low on-resistance characteristics to prevent increased conduction losses or lower supply voltages.

In order to meet this need, Renesas Electronics has developed a (three-piece) MOSFET product based on the company's new low on-resistance process. The new μPA2764T1A, μPA2765T1A and μPA2766T1A meet these needs and offer low on-state resistance in industry-leading power supplies in a smaller form factor.

Key features of the new low on-resistance power MOSFET products

(1) Industry's lowest on-resistance

The new μPA2766T1A provides 0.72 mΩ of the industry's lowest on-resistance for 30V applications in a 5 mm × 6 mm package by reducing power supplies used in critical applications in the smart space – network servers and storage systems. Conduction losses increase the overall power efficiency of the system. In addition, this feature allows us to suppress large voltage drops with large currents. Moreover, even in the case where a large current fluctuation occurs in the power supply device, a high-precision power supply voltage can be obtained.

(2) 8-pin HVSON package with small area mounting and high current control support

The 8-pin HVSON package provides low package resistance because the metal plate is used to connect the FET mold inside the package to the pins. This feature, combined with the low on-state resistance of the FET mold, enables control of high currents up to 130 A (ID (DC)) even in a compact package measuring 5 mm × 6 mm. Furthermore, in the case where multiple ORing FETs are connected in parallel to each power supply unit to supply a larger current, this feature of the product also helps to reduce the size of the device by achieving a minimum number of parallel connections.

These three new MOSFET products, including the μPA2766T1A, have an on-resistance rating of 0.72 mΩ to 1.05 mΩ (standard). This range allows for better product selection to meet the user's requirements for operating current or environmental conditions in an optimal state. Moreover, it enables customers to provide the best products that help increase power efficiency and reduce space requirements.

Renesas Electronics plans to further strengthen its product line and continue to strive to reduce on-state resistance and develop smaller package sizes to meet the changing needs of customers.