- Littelfuse , Inc., a global leader in circuit protection, today announced the launch of its first GEN2 series of 1200V silicon carbide (SiC) Schottky diodes to coincide with the opening of the 2017 European Power Conversion and Intelligent Motion (PCIM) show. This silicon carbide diode is the first in a family of products developed through the Littelfuse and Monolith Semiconductor technology platforms. Other silicon carbide products based on this technology platform (including 1200V SiC MOS field-effect transistors) are under preparation and are expected to be launched in the near future.
GEN2 Series Silicon Carbide Schottky Diode
The GEN2 silicon carbide Schottky diodes are rated at 1200V and operate from 5A to 10A in a TO?220-2L or TO-252-2L package. Compared to standard silicon bipolar power diodes, this diode allows circuit designers to dramatically reduce switching losses and significantly improve the efficiency and durability of power electronics systems. It withstands high inrush currents while avoiding thermal runaway and can operate at higher junction temperatures than silicon diodes. It also provides best-in-class storage capacitor charge and forward voltage drop.
Typical applications for GEN2 series silicon carbide Schottky diodes include power factor correction (PFC), buck/boost phase of DC-DC converters, continuation of inverter stages (switch mode power supplies, solar, UPS, industrial drives) Flow diodes and high-frequency output rectification require applications that improve efficiency, reliability, and thermal management. Such diodes are especially useful for designers and manufacturers of industrial power supplies, solar inverters, industrial drives, soldering and plasma cutting equipment, and EV/HEV charging stations.
"The hybrid pn Schottky (MPS) architecture of this new silicon carbide Schottky diode provides circuit designers with greater surge performance and very low leakage current," said Michael Ketterer, Littelfuse Power Semiconductor Product Marketing Manager. Compared to traditional silicon power diodes, this silicon carbide Schottky diode improves converter efficiency and power density while helping to reduce system-level cost."
The Littelfuse GEN2 series of silicon carbide Schottky diodes have the following key advantages:
Best-in-class capacitor storage charge and negligible reverse recovery make it ideal for high frequency power switching applications. It also ensures negligible switching losses and reduces stress on the opposite switch.
• Best-in-class forward voltage drop ensures low conduction losses.
The maximum junction temperature of 175 °C provides greater design margin and more relaxed thermal management requirements.
Availability
The GEN2 Series Silicon Carbide Schottky Diodes are available in TO-220-2L (1,000-pack) or TO-252-2L (DPAK) packages (2,500 tape and reel). Samples are available from authorized Littelfuse dealers around the world. For a list of Littelfuse authorized dealers, visit Littelfuse.com.
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